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1. product profile 1.1 general description logic level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology. this product has been designed and qualified to the appropriate aec standard for use in automotive critical applications. 1.2 features and benefits 1.3 applications 1.4 quick reference data [1] continuous current is limited by package. [2] refer to document 9397 750 12572 for further information. BUK952R4-40C n-channel trenchmos logic level fet rev. 02 ? 11 april 2008 product data sheet ? low conduction losses due to low on-state resistance ? q101 compliant ? suitable for logic level gate drive sources ? suitable for thermally demanding environments due to 175 c rating ? 12 v loads ? automotive systems ? general purpose power switching ? motors, lamps and solenoids table 1. quick reference symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 175 c --40v i d drain current v gs =5v; t j =25 c; see figure 1 and 4 [1] [2] - - 100 a p tot total power dissipation t mb =25 c; see figure 2 - - 333 w avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy i d =100a; v sup 40 v; r gs =50 ; v gs =5v; t j(init) =25 c; unclamped --1.2j dynamic characteristics q gd gate-drain charge v gs =5v; i d =25a; v ds = 32 v; see figure 14 -73-nc static characteristics r dson drain-source on-state resistance v gs =5v; i d =25a; t j =25 c; see figure 12 , 11 and 13 -2.12.4m
BUK952R4-40C_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 ? 11 april 2008 2 of 13 nxp semiconductors BUK952R4-40C n-channel trenchmos logic level fet 2. pinning information 3. ordering information 4. limiting values table 2. pinning pin symbol description simplified outline graphic symbol 1 g gate sot78 (to-220ab) 2 d drain 3 s source mb d mounting base; connected to drain 12 mb 3 s d g m bb076 table 3. ordering information type number package name description version BUK952R4-40C to-220ab plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead to-220ab sot78 table 4. limiting values in accordance with the absolute ma ximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j 25 c; t j 175 c-40v v dgr drain-gate voltage r gs =20k -40v v gs gate-source voltage -15 15 v i d drain current t mb =25 c; v gs = 5 v; see figure 1 [1] - 270 a v gs =5v; t j =100 c; see figure 1 [2] [3] - 100 a v gs =5v; t j =25 c; see figure 1 and 4 [2] [3] - 100 a i dm peak drain current t mb =25 c; t p 10 s; pulsed; see figure 4 - 1080 a p tot total power dissipation t mb =25 c; see figure 2 - 333 w t stg storage temperature -55 175 c t j junction temperature -55 175 c avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy i d =100a; v sup 40 v; r gs =50 ; v gs =5v; t j(init) =25 c; unclamped -1.2j e ds(al)r repetitive drain-source avalanche energy see figure 3 [4] [5] [6] --j
BUK952R4-40C_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 ? 11 april 2008 3 of 13 nxp semiconductors BUK952R4-40C n-channel trenchmos logic level fet [1] current is limited by ch ip power dissipation rating. [2] continuous current is limited by package. [3] refer to document 9397 750 12572 for further information. [4] single-pulse avalanche ra ting limited by maximum junction temperature of 175 c. [5] repetitive avalanche rating limited by an average junction temperature of 170 c. [6] refer to application note an10273 for further information. source-drain diode i s source current t mb =25 c [2] [3] - 100 a i sm peak source current t p 10 s; pulsed; t mb =25 c - 1080 a table 4. limiting values ?continued in accordance with the absolute ma ximum rating system (iec 60134). symbol parameter conditions min max unit fig 1. continuous drain current as a function of mounting base temperature fig 2. normalized total power dissipation as a function of mounting base temperature 003aac267 0 100 200 300 0 50 100 150 200 t mb ( c) i d (a) (1) t mb ( c) 0 200 150 50 100 03na19 40 80 120 p der (%) 0 v gs ? 5 v (1) capped at 100 a due to package. p der = p tot p tot ( 25 c ) 100 %
BUK952R4-40C_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 ? 11 april 2008 4 of 13 nxp semiconductors BUK952R4-40C n-channel trenchmos logic level fet fig 3. single-pulse and repetitive avalanche rating ; avalanche current as a function of avalanche time fig 4. safe operating area; continuous and peak drain currents as a function of drain-source voltage 003aac266 10 -1 1 10 10 2 10 3 10 -3 10 -2 10 -1 1 10 t al (ms) i al (a) (1) (2) (3) (1) single pulse; t j =25 c . (2) single pulse; t j = 150 c . (3) repetitive. 003aac271 10 -1 1 10 10 2 10 3 10 4 10 -1 1 10 10 2 v ds (v) i d (a) dc t p = 10 s 100 s 1 ms 10 ms 100 ms limit r dson = v ds / i d (1) t mb =25 c ; i dm is single pulse (1) capped at 100 a due to package.
BUK952R4-40C_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 ? 11 april 2008 5 of 13 nxp semiconductors BUK952R4-40C n-channel trenchmos logic level fet 5. thermal characteristics 6. characteristics table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient vertical in free air - 60 - k/w r th(j-mb) thermal resistance from junction to mounting base see figure 5 - - 0.45 k/w fig 5. transient thermal impedance from junction to mounting base as a function of pulse duration 003aab020 t p (s) 10 ? 6 10 ? 1 1 10 ? 2 10 ? 3 10 ? 5 10 ? 4 10 ? 1 10 ? 2 1 z th(j-mb) (k/w) 10 ? 3 t p t p t p t t = single shot 0.02 0.05 0.1 0.2 = 0.5 table 6. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =250 a; v gs =0v; t j =25 c 40 - - v i d =250 a; v gs =0v; t j =-55 c 36 - - v v gs(th) gate-source threshold voltage i d =1ma; v ds = v gs ; t j =25 c; see figure 9 and 10 11.52v i d =1ma; v ds = v gs ; t j =-55 c; see figure 9 --2.3v i d =1ma; v ds = v gs ; t j = 175 c; see figure 9 0.5 - - v i dss drain leakage current v ds =40v; v gs =0v; t j = 175 c --500 a v ds =40v; v gs =0v; t j =25 c - 0.02 1 a
BUK952R4-40C_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 ? 11 april 2008 6 of 13 nxp semiconductors BUK952R4-40C n-channel trenchmos logic level fet i gss gate leakage current v ds =0v; v gs =15v; t j =25 c - 2 100 na v ds =0v; v gs =-15v; t j =25 c -2100na r dson drain-source on-state resistance v gs =4.5v; i d =25a; t j =25 c- - 2.7 m v gs =10v; i d =25a; t j =25 c- 1.8 2.1 m v gs =5v; i d =25a; t j = 175 c; see figure 11 --4.6m v gs =5v; i d =25a; t j =25 c; see figure 12 , 11 and 13 -2.12.4m source-drain diode v sd source-drain voltage i s =25a; v gs =0v; t j =25 c; see figure 16 -0.851.2v t rr reverse recovery time i s =25a; di s /dt = 100 a/ s; v gs =0v; v ds =30v -70-ns q r recovered charge - 60 - nc dynamic characteristics q g(tot) total gate charge i d =25a; v ds =32v; v gs =5v; see figure 14 -120-nc q gs gate-source charge - 30 - nc q gd gate-drain charge - 73 - nc c iss input capacitance v gs =0v; v ds =25v; f=1mhz; t j =25 c; see figure 15 - 12487 16700 pf c oss output capacitance - 1323 1600 pf c rss reverse transfer capacitance - 938 1290 pf t d(on) turn-on delay time v ds =30v; r l =1.2 ; v gs =5v; r g(ext) =10 -130-ns t r rise time - 310 - ns t d(off) turn-off delay time - 380 - ns t f fall time - 250 - ns l d internal drain inductance from contact screw on mounting base to centre of die -3.5-nh from drain lead 6 mm from package to centre of die -4.5-nh l s internal source inductance from source lead to source bond pad -7.5-nh table 6. characteristics ?continued symbol parameter conditions min typ max unit
BUK952R4-40C_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 ? 11 april 2008 7 of 13 nxp semiconductors BUK952R4-40C n-channel trenchmos logic level fet fig 6. forward transconductance as a function of drain current; typical values fig 7. transfer characteristics: drain current as a function of gate-source voltage; typical values fig 8. output characteristics: drain current as a function of drain-source voltage; typical values fig 9. gate-source threshold voltage as a function of junction temperature 003aac256 0 60 120 180 240 0204060 i d (a) g fs (s) 003aac253 0 100 200 300 024 v gs (v) i d (a) t j = 175 c 25 c t j =25 c ; v ds =25 v v ds =25 v 003aac252 0 100 200 300 012345 v ds (v) i d (a) 2.4 3 3.8 v gs (v) = 10 3.6 3.2 2.6 2.8 03aa33 0 0.5 1 1.5 2 2.5 -60 0 60 120 180 t j ( c) v gs(th) (v) max typ min t j =25 c i d =1 ma ; v ds = v gs
BUK952R4-40C_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 ? 11 april 2008 8 of 13 nxp semiconductors BUK952R4-40C n-channel trenchmos logic level fet fig 10. sub-threshold drain current as a function of gate-source voltage fig 11. normalized drain-source on-state resistance factor as a function of junction temperature fig 12. drain-source on-state resistance as a function of drain current; typical values fig 13. drain-source on-state resistance as a function of gate-source voltage; typical values 03aa36 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 0123 v gs (v) i d (a) max typ min 03aa27 0 0.5 1 1.5 2 -60 0 60 120 180 t j ( c) a t j =25 c ; v ds = v gs a = r dson r dson ( 25 c ) 003aac265 1 2 3 4 5 6 0 50 100 150 200 250 i d (a) r dson (m ) v gs (v) = 2.8 3 3.2 3.6 3.8 10 003aac257 0 2 4 6 8 10 0 5 10 15 v gs (v) r dson (m ) t j =25 c t j =25 c ; i d =25 a
BUK952R4-40C_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 ? 11 april 2008 9 of 13 nxp semiconductors BUK952R4-40C n-channel trenchmos logic level fet fig 14. gate-source voltage as a function of gate charge; typical values fig 15. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values fig 16. source (diode forward) current as a function of source-drain (diode forward) voltage; typical values 003aac254 0 2 4 6 8 10 0 50 100 150 200 q g (nc) v gs (v) v ds = 14 v 32 v 003aac255 0 4000 8000 12000 16000 20000 24000 10 -1 1 10 10 2 v ds (v) c (pf) c iss c oss c rss t j =25 c ; i d =25 a v gs =0 v ; f =1 mhz 003aac261 0 50 100 150 200 250 00.511.52 v sd (v) i s (a) t j = 175 c 25 c v gs =0 v
BUK952R4-40C_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 ? 11 april 2008 10 of 13 nxp semiconductors BUK952R4-40C n-channel trenchmos logic level fet 7. package outline fig 17. package outline sot78 (to-220ab) references outline version european projection issue date iec jedec jeita sot78 sc-46 3-lead to-220ab d d 1 q p l 123 l 1 b 1 e e b 0 5 10 mm scale plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead to-220ab sot78 dimensions (mm are the original dimensions) a e a 1 c q l 2 unit a 1 b 1 d 1 e p mm 2.54 qq a b d c l 2 max. 3.0 3.8 3.5 15.0 12.8 3.30 2.79 3.0 2.7 2.6 2.2 0.7 0.4 16.0 15.2 0.9 0.6 1.45 1.00 4.7 4.1 1.40 1.25 6.6 5.9 10.3 9.7 l 1 e l 05-03-22 05-10-25 mounting base
BUK952R4-40C_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 ? 11 april 2008 11 of 13 nxp semiconductors BUK952R4-40C n-channel trenchmos logic level fet 8. revision history table 7. revision history document id release date data sheet status change notice supersedes BUK952R4-40C_2 20080411 product data sheet BUK952R4-40C_1 modifications: ? table 6 : v ds condition for i dss corrected. BUK952R4-40C_1 20080328 product data sheet - -
BUK952R4-40C_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 ? 11 april 2008 12 of 13 nxp semiconductors BUK952R4-40C n-channel trenchmos logic level fet 9. legal information 9.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 9.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 disclaimers general ? information in this document is believed to be accurate and reliable. however, nxp semiconductors d oes not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale ? nxp semiconductors products are sold subject to the general terms and condit ions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writ ing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. 9.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. trenchmos ? is a trademark of nxp b.v. 10. contact information for additional information, please visit: http://www.nxp.com for sales office addresses, send an email to: salesaddresses@nxp.com document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
nxp semiconductors BUK952R4-40C n-channel trenchmos logic level fet ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 11 april 2008 document identifier: BUK952R4-40C_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 11. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 5 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 9 legal information. . . . . . . . . . . . . . . . . . . . . . . 12 9.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 9.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 9.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 9.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 10 contact information. . . . . . . . . . . . . . . . . . . . . 12 11 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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